onsemi · FETs & Power MOSFETs · MPN FDD6630A
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 50mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 462pF |
| Type | N-Channel |
30V 21A 3V 28W 50mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS