onsemi · FETs & Power MOSFETs · MPN FDD6612A
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| Gate Charge(Qg) | 6.7nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 28mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 660pF |
| Type | N-Channel |
30V 30A 3V 36W 28mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS