onsemi FDD6530A

onsemi · FETs & Power MOSFETs · MPN FDD6530A

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)173pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)47mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)710pF
TypeN-Channel

Technical details

20V 21A 1.2V 33W 47mΩ@2.5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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