onsemi · FETs & Power MOSFETs · MPN FDD6530A
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 173pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 84pF |
| RDS(on) | 47mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
| Type | N-Channel |
20V 21A 1.2V 33W 47mΩ@2.5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS