onsemi FDD6030BL

onsemi · FETs & Power MOSFETs · MPN FDD6030BL

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)31nC@10V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.143nF
TypeN-Channel

Technical details

30V 42A 3V 50W 16mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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