onsemi FDD5N60NZTM

onsemi · FETs & Power MOSFETs · MPN FDD5N60NZTM

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 600V 4A 83W Surface Mount TO-252(DPAK)

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