onsemi · FETs & Power MOSFETs · MPN FDD5N53TM
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 530V |
| Output Capacitance(Coss) | 88pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 640pF |
| Type | N-Channel |
530V 4A 5V 40W 1.5Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS