onsemi FDD5N50UTM

onsemi · FETs & Power MOSFETs · MPN FDD5N50UTM

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)2Ω@10V
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

500V 3A 5V 40W 2Ω@10V N-Channel Single FETs, MOSFETs RoHS

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