onsemi · FETs & Power MOSFETs · MPN FDD5N50NZFTM
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 3.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 1.47Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 485pF |
500V 3.7A 3V 62.5W 1.47Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS