onsemi · FETs & Power MOSFETs · MPN FDD5N50FTM-WS
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
500V 3.5A 3V 40W 1 N-channel TO-252 Single FETs, MOSFETs RoHS