onsemi · FETs & Power MOSFETs · MPN FDD5810-F085
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 72W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 27mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.89nF |
60V 1.6V 72W 27mΩ@5V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS