onsemi · FETs & Power MOSFETs · MPN FDD5690
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| Gate Charge(Qg) | 23nC@30V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 32mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
60V 30A 2.5V 50W 32mΩ@6V 1 N-channel TO-252 Single FETs, MOSFETs RoHS