onsemi FDD5614P

onsemi · FETs & Power MOSFETs · MPN FDD5614P

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)130mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)759pF
TypeP-Channel

Technical details

P-Channel 60V 20A 45W Surface Mount TO-252-2

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