onsemi · FETs & Power MOSFETs · MPN FDD5614P
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 130mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 759pF |
| Type | P-Channel |
P-Channel 60V 20A 45W Surface Mount TO-252-2