onsemi FDD5612

onsemi · FETs & Power MOSFETs · MPN FDD5612

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)79pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
RDS(on)64mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 N-channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel 60V 18A 42W Surface Mount TO-252

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