onsemi · FETs & Power MOSFETs · MPN FDD5353
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 11.5A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.1W;69W |
| RDS(on) | 12.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.215nF |
60V 3V 12.3mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS