onsemi FDD4685

onsemi · FETs & Power MOSFETs · MPN FDD4685

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.38nF
TypeP-Channel

Technical details

P-Channel 40V 40A 69W Surface Mount DPAK(TO-252)

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