onsemi FDD4141-F085

onsemi · FETs & Power MOSFETs · MPN FDD4141-F085

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)12.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.085nF
TypeP-Channel

Technical details

40V 58A 1.8V 69W 12.3mΩ@10V 1 P-Channel P-Channel TO-252-2 Single FETs, MOSFETs RoHS

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