onsemi · FETs & Power MOSFETs · MPN FDD3860
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.74nF |
N-Channel 100V 29A 83W Surface Mount TO-252