onsemi · FETs & Power MOSFETs · MPN FDD306P
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 21nC@4.5V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 90mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.29nF |
| Type | P-Channel |
P-Channel 12V 6.7A 52W Surface Mount TO-252