onsemi FDD306P

onsemi · FETs & Power MOSFETs · MPN FDD306P

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)21nC@4.5V
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)90mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.29nF
TypeP-Channel

Technical details

P-Channel 12V 6.7A 52W Surface Mount TO-252

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