onsemi · FETs & Power MOSFETs · MPN FDD2670
No reviews yet — be the first to review onsemi FDD2670.
| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 3.2W;70W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.228nF |
200V 3.6A 4.5V 130mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS