onsemi FDD2572

onsemi · FETs & Power MOSFETs · MPN FDD2572

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)4A;29A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)54mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.77nF

Technical details

150V 4V 135W 54mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

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