onsemi · FETs & Power MOSFETs · MPN FDD1600N10ALZD
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 3.61nC@10V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 14.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF |
| RDS(on) | 375mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
| Type | N-Channel |
100V 6.8A 2.8V 14.9W 375mΩ@5V 1 N-channel N-Channel TO-252-4 Single FETs, MOSFETs RoHS