onsemi · FETs & Power MOSFETs · MPN FDD13AN06A0-F085
No reviews yet — be the first to review onsemi FDD13AN06A0-F085.
| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 9.9A;50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
60V 4V 115W 13.5mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS