onsemi · FETs & Power MOSFETs · MPN FDD10AN06A0Q
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| Drain to Source Voltage | 60V |
|---|---|
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 135W |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.84nF |
60V 11A 4V 135W 10.5mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS