onsemi FDC8884

onsemi · FETs & Power MOSFETs · MPN FDC8884

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.4nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)465pF
TypeN-Channel

Technical details

N-Channel 30V 8A 1.6W Surface Mount SuperSOT-6

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