onsemi · FETs & Power MOSFETs · MPN FDC8878
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.04nF |
30V 8A 3V 1.6W 16mΩ@10V 1 N-channel SSOT-6 Single FETs, MOSFETs RoHS