onsemi · FETs & Power MOSFETs · MPN FDC658AP-G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 8.1nC |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 75mΩ@4.5V |
| Input Capacitance(Ciss) | 680pF |
| Type | P-Channel |
30V 4A 3V 1.6W 75mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS