onsemi · FETs & Power MOSFETs · MPN FDC6561AN
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| Current - Continuous Drain(Id) | 2.5A |
|---|---|
| RDS(on) | 145mΩ@4.5V |
| Pd - Power Dissipation | 960mW |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 220pF |
| Gate Charge(Qg) | 3.2nC@5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 50pF |
N-Channel Array 30V 2.5A 0.96W Surface Mount TSOT-26