onsemi · FETs & Power MOSFETs · MPN FDC654P
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| Gate Charge(Qg) | 6.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 75mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 298pF |
P-Channel 30V 3.6A 1.6W Surface Mount SuperSOT-6