onsemi FDC653N

onsemi · FETs & Power MOSFETs · MPN FDC653N

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)55mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

N-Channel 30V 5A 1.6W Surface Mount SSOT-6

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