onsemi · FETs & Power MOSFETs · MPN FDC645N
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| Gate Charge(Qg) | 21nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.46nF |
| Type | N-Channel |
N-Channel 30V 5.5A 1.6W Surface Mount TSOT-23-6