onsemi · FETs & Power MOSFETs · MPN FDC638APZ
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| Gate Charge(Qg) | 12nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 43mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
| Type | P-Channel |
P-Channel 20V 4.5A 1.6W Surface Mount SuperSOT-6