onsemi · FETs & Power MOSFETs · MPN FDC637BNZ
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| Gate Charge(Qg) | 12nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 24mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 895pF |
20V 6.2A 800mV 1.6W 24mΩ@4.5V 1 N-channel SSOT-6 Single FETs, MOSFETs RoHS