onsemi FDC633N

onsemi · FETs & Power MOSFETs · MPN FDC633N

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@4.5V
Output Capacitance(Coss)226pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)54mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)538pF
TypeN-Channel

Technical details

30V 5.2A 1V 1.6W 54mΩ@2.5V 1 N-channel N-Channel SuperSOT-6 Single FETs, MOSFETs RoHS

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