onsemi · FETs & Power MOSFETs · MPN FDC633N
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 16nC@4.5V |
| Output Capacitance(Coss) | 226pF |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 54mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 538pF |
| Type | N-Channel |
30V 5.2A 1V 1.6W 54mΩ@2.5V 1 N-channel N-Channel SuperSOT-6 Single FETs, MOSFETs RoHS