onsemi FDC6333C

onsemi · FETs & Power MOSFETs · MPN FDC6333C

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Specifications

Current - Continuous Drain(Id)2.5A
RDS(on)220mΩ@4.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)282pF
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)56pF

Technical details

N-Channel+P-Channel Array 30V 2.5A 0.96W Surface Mount SuperSOT-6

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