onsemi · FETs & Power MOSFETs · MPN FDC6327C
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| Current - Continuous Drain(Id) | 2.7A;1.9A |
|---|---|
| RDS(on) | 69mΩ@4.5V |
| Pd - Power Dissipation | 900mW |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 325pF |
| Gate Charge(Qg) | 3.25nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 20V 0.9W Surface Mount SuperSOT-6