onsemi · FETs & Power MOSFETs · MPN FDC6321C
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| Current - Continuous Drain(Id) | 680mA;460mA |
|---|---|
| Pd - Power Dissipation | 700mW |
| RDS(on) | 450mΩ@4.5V;1.1Ω@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 860mV |
| Drain to Source Voltage | 25V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 50pF;63pF |
| Gate Charge(Qg) | 1.64nC@4.5V;1.1nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 28pF;34pF |
700mW 860mV 1 N-Channel + 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS