onsemi · FETs & Power MOSFETs · MPN FDC6318P
No reviews yet — be the first to review onsemi FDC6318P.
| Current - Continuous Drain(Id) | 2.5A |
|---|---|
| RDS(on) | 200mΩ@1.8V |
| Pd - Power Dissipation | 960mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 12V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 8nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
2.5A 200mΩ@1.8V 960mW 1.5V 2 P-Channel SuperSOT-6 FET, MOSFET Arrays RoHS