onsemi · FETs & Power MOSFETs · MPN FDC6312P
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 225mΩ@1.8V |
| Pd - Power Dissipation | 960mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 467pF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
P-Channel 20V 8A 0.96W Surface Mount SuperSOT-6