onsemi · FETs & Power MOSFETs · MPN FDC6305N
No reviews yet — be the first to review onsemi FDC6305N.
| Current - Continuous Drain(Id) | 2.7A |
|---|---|
| RDS(on) | 120mΩ@2.5V |
| Pd - Power Dissipation | 960mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 310pF |
| Gate Charge(Qg) | 5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 80pF |
N-Channel Array 20V 2.7A 0.96W Surface Mount TSOT-23-6