onsemi · FETs & Power MOSFETs · MPN FDC6303N
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| Current - Continuous Drain(Id) | 680mA |
|---|---|
| Pd - Power Dissipation | 900mW |
| RDS(on) | 600mΩ@2.7V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
| Gate Charge(Qg) | 2.3nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 28pF |
N-Channel Array 25V 0.68A 0.9W Surface Mount TSOT-23-6