onsemi · FETs & Power MOSFETs · MPN FDC6301N
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| Current - Continuous Drain(Id) | 220mA |
|---|---|
| RDS(on) | 5Ω@2.7V |
| Pd - Power Dissipation | 900mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | - |
| Input Capacitance(Ciss) | 9.5pF |
| Gate Charge(Qg) | 700pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 6pF |
N-Channel 25V 0.22A 0.9W Surface Mount SuperSOT-6