onsemi FDC610PZ

onsemi · FETs & Power MOSFETs · MPN FDC610PZ

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.005nF
TypeP-Channel

Technical details

P-Channel 30V 4.9A 1.6W Surface Mount SuperSOT-6

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