onsemi FDC606P

onsemi · FETs & Power MOSFETs · MPN FDC606P

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)679pF
Current - Continuous Drain(Id)6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)423pF
RDS(on)53mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.699nF
TypeP-Channel

Technical details

P-Channel 12V 6A 1.6W Surface Mount SuperSOT-6

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