onsemi · FETs & Power MOSFETs · MPN FDC5614P
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| Gate Charge(Qg) | 15nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 759pF |
P-Channel 60V 3A 1.6W Surface Mount SuperSOT-6