onsemi FDC5612

onsemi · FETs & Power MOSFETs · MPN FDC5612

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 60V 4.3A 1.6W Surface Mount SuperSOT-6

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