onsemi · FETs & Power MOSFETs · MPN FDC365P
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 35V |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 705pF |
35V 4.3A 1.8V 1.6W 55mΩ@10V 1 P-Channel SSOT-6 Single FETs, MOSFETs RoHS