onsemi FDC3612

onsemi · FETs & Power MOSFETs · MPN FDC3612

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)135mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel 100V 2.6A 1.6W Surface Mount SuperSOT-6

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