onsemi · FETs & Power MOSFETs · MPN FDC3601N
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| Current - Continuous Drain(Id) | 1A |
|---|---|
| RDS(on) | 500mΩ@10V |
| Pd - Power Dissipation | 960mW |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 153pF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
1A 500mΩ@10V 960mW 2.6V 2 N-Channel SuperSOT-6 FET, MOSFET Arrays RoHS