onsemi · FETs & Power MOSFETs · MPN FDC3512
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 58pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 634pF |
| Type | N-Channel |
80V 3A 4V 1.6W 1 N-channel N-Channel SuperSOT-6 Single FETs, MOSFETs RoHS