onsemi · FETs & Power MOSFETs · MPN FDC2512
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 475mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 344pF |
| Type | N-Channel |
150V 1.4A 4V 1.6W 475mΩ@6V 1 N-channel N-Channel SuperSOT-6 Single FETs, MOSFETs RoHS